| PART |
Description |
Maker |
| 2SK3112 |
Gate voltage rating -30 V Low on-state resistance RDS(on) = 110m MAX.
|
TY Semiconductor Co., Ltd
|
| STBS056 STBS5D0 STBS010 STBS011 STBS012 STBS013 ST |
SURFACE MOUNT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR
JFET; Continuous Drain Current, Id:1mA; Current Rating:50mA; Gate-Source Breakdown Voltage:-40V; Gate-Source Cutoff Voltage:-1.5V; Leaded Process Compatible:No; Mounting Type:Through Hole; On-Resistance, Rds(on):750ohm RoHS Compliant: No
JFET; Transistor Polarity:N Channel; Package/Case:TO-226AA; Continuous Drain Current, Id:90uA; Current Rating:50mA; Gate-Source Breakdown Voltage:-40V; Gate-Source Cutoff Voltage:-1.8V; Leaded Process Compatible:No
JFET; Transistor Polarity:N Channel; Package/Case:TO-226AA; Continuous Drain Current, Id:240uA; Current Rating:50mA; Gate-Source Breakdown Voltage:-40V; Gate-Source Cutoff Voltage:-3V; Leaded Process Compatible:No
MOSFET, N SC-75AMOSFET, N SC-75A; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:20V; Case style:SC-75A; Current, Id cont:0.5A; Current, Idm pulse:1A; Power, Pd:0.15W; Resistance, Rds on:1.25R; SMD:1; Depth,
|
Electronics Industry Public Company Limited
EIC Semiconductor
EIC[EIC discrete Semiconductors]
EIC discrete Semiconduc...
|
| SF_BDX16A BDX16A BDX16 |
Metal Oxide Varistor (MOV); Voltage Rating AC, Vrms:130Vrms; Voltage Rating DC, Vdc:175VDC; Peak Surge Current (8/20uS), Itm:2500A; Clamping Voltage
Bipolar PNP Device
|
SEME-LAB[Seme LAB]
|
| AT22LV10 AT22LV10L AT22LV10L-30GM AT22LV10-20JL AT |
500 gate low voltage PLD, low power, 24 and 28 pins, 3V
30NS, OTP, CERDIP, MIL TEMP(EPLD)
Low-voltage UV
From old datasheet system
AT22LV10(L) [Updated 8/99. 12 Pages] 500 gate low voltage PLD. standard & low power. 24 pins
OT PLD, 20 ns, PQCC28
OT PLD, 25 ns, PQCC28
|
Atmel Corporation
N/A
|
| BC868 BC868-25 BC868/T1 |
NPN medium power transistor
Leaded Cartridge Fuse; Current Rating:100mA; Voltage Rating:125V; Fuse Terminals:Radial Lead; Fuse Type:Fast Acting; Voltage Rating:125V; Body Material:Plastic Cap; Diameter:6.35mm; Leaded Process Compatible:Yes; Length:8.89mm RoHS Compliant: Yes
|
NXP Semiconductors
Philips Semiconductors
|
| STK4141XSERIES |
Metal Oxide Varistor (MOV); Voltage Rating AC, Vrms:460Vrms; Voltage Rating DC, Vdc:615VDC; Peak Surge Current (8/20uS), Itm:3500A; Clamping Voltage 8/20us Max :1240V; Capacitance, Cd:120pF; Package/Case:10mm Disc 双音频放大器
|
Sanyo Electric Co., Ltd.
|
| TC74LCX00FT TC74LCX00F TC74LCX00FN |
High Speed CMOS Low Voltage 2 Input NAND Gate(高速CMOS低电压２输入与非 高速CMOS低压二输入与非门（高速的CMOS低电压二输入与非门）
LOW-VOLTAGE QUAD 2-INPUT NAND GATE WITH 5V TOLERANT INPUTS AND OUTPUTS
|
Toshiba, Corp.
Toshiba Semiconductor
|
| F02A250V1A |
Cartridge Fuse; Voltage Rating:1.2V; Fuse Type:Time Delay; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No; Voltage Rating:1.2V RoHS Compliant: No
|
COOPER INDUSTRIES
|
| 4789.1100 |
IEC Power Connector; Voltage Rating:250V; Mounting Type:Cable; Current Rating:21A; Body Material:Thermoplastic RoHS Compliant: Yes
|
SCHURTER INC
|
| KE10.2100.105 KE15.1100.109 KE10.6100.107 KE10.210 |
Power Entry Module; IEC; Voltage Rating: 250V; Current Rating: 13A; Terminal Type: Quick Connect Tabs; Appliance inlet; fuseholder; and series-parallel voltage selector 10A, 125/250VAC, MALE, MAINS POWER CONNECTOR, SOLDER, SOCKET
|
SCHURTER AG
SCHURTER INC
|
| BDX95 |
Metal Oxide Varistor (MOV); Voltage Rating AC, Vrms:320Vrms; Voltage Rating DC, Vdc:420VDC; Peak Surge Current (8/20uS), Itm:4500A; Clamping Voltage 8/20us Max :850V; Peak Energy (10/1000uS):80J; Capacitance, Cd:380pF
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package
|
Seme LAB
|
| BDX91 |
Metal Oxide Varistor (MOV); Voltage Rating AC, Vrms:300Vrms; Voltage Rating DC, Vdc:405VDC; Peak Surge Current (8/20uS), Itm:1200A; Clamping Voltage 8/20us Max :775V; Peak Energy (10/1000uS):25J; Capacitance, Cd:70pF
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package.
|
Seme LAB
|
